Analytical Approach to Improve the Performance of a Fully Integrated Class-F Power Amplifier with 0.13 µm BiCMOS Technology Using Drain–Bulk Capacitor Modulation

Realization of a Low Noise Amplifier using 0.35 μm SiGe-BiCMOS Technology for IEEE 802.11a Applications

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Fully Integrated CMOS Power Amplifier

A Fully-Manufacturable 0.5μm SiGe BiCMOS Technology for Wireless Power Amplifier Applications

IBM Microelectronics Division, Essex Junction, VT, [email protected] *Ericsson Mobile Platforms AB, Nya Vattentornet, SE-221 83 Lund, Sweden, [email protected] **IBM Microelectronics Division, East Fishkill, NY We present for the first time a fully-manufacturable 0.5μm/3.3V SiGe BiCMOS technology that supports multiple mode (GSM/ PCS/ WCDMA) power amplifier applications, highlighting H...

Novel Approach to Design of a Class-EJ Power Amplifier Using High Power Technology

This article proposes a new method for application in communication circuit systems that increase efficiency, PAE, output power and gain in the circuit. The proposed method is based on a combination of switching class-E and class-J and has been termed class-EJ. This method was investigated using both theory and simulation to confirm ∼72% PAE and output power of >39dBm. The combination and desig...

Design and Performance Analysis of Low Power RF Operational Amplifier using CMOS and BiCMOS Technology

This paper presents the design and performance comparison of a two stage operational amplifier topology using CMOS and BiCMOS technology. This conventional op amp circuit was designed by using RF model of BSIM3V3 in 0.6 μm CMOS technology and 0.35 μm BiCMOS technology. Both the op amp circuits were designed and simulated, analyzed and performance parameters are compared. The performance paramet...